Figure 6From: Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM deviceSchematic diagrams of the proposed hybrid filament model for the radiation effects. The schematic diagram of filaments in LRS of the devices (a) without radiation, and with the total radiation dose of (b) 500 krad(Si) and (c) 1 Mrad(Si). The microscopic changes of the filaments reveal an increase of holes generated by the radiation.Back to article page