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Table 1 Comparison of radiation effects between published literature and this work

From: Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

References

Device structure

Total dose

Resistance

Operation voltage

   

Initial

Low

High

Forming

Set

Reset

[11]

Cu/HfO2:Cu/Pt

360 krad (Si)

NA

[13]

Pt/TiO2/Pt

14 Mrad (Si)

NA

NA

NA

NA

[15]

TiN/TaO x /Pt

180 krad (Si)

NA

NA

NA

This work

Ag/AlO x /Pt

1 Mrad (Si)

  1. NA, not available; √, no or negligible change; ↑, increase; ↓, decrease.

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