Figure 2From: Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layerC-V characteristics of stacking HfO 2 /SiO 2 (SH/O) and single HfO 2 /SiO 2 (H/O). The I-V measurements for samples SH/O and H/O are shown in the insets (a) and (b), respectively.Back to article page