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Table 2 Values used for calculating strain-induced piezoelectric field[13][16][17][18][19]

From: Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

  AlN GaN
a0(Å) 3.112 3.189
ϵ 8.5 10.0
e31(C.m−2) −0.600 −0.490
e33(C.m−2) 1.460 0.730
C11(GPa) 398 396
C12(GPa) 140 144
C13(GPa) 127 100