TY - CHAP AU - Wong, H. AU - Zhang, J. PY - 2014 DA - 2014// TI - Challenges of next generation ultrathin gate dielectrics BT - Proc IEEE Int Symp Next Generation Electronics; Taoyuan PB - IEEE Press CY - Piscataway ID - Wong2014 ER - TY - BOOK AU - Wong, H. PY - 2012 DA - 2012// TI - Nano-CMOS Gate Dielectric Engineering PB - CRC Press CY - Boca Raton ID - Wong2012 ER - TY - JOUR AU - Wong, H. AU - Iwai, H. PY - 2006 DA - 2006// TI - On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors JO - Microelectron Engineer VL - 83 UR - https://doi.org/10.1016/j.mee.2006.01.271 DO - 10.1016/j.mee.2006.01.271 ID - Wong2006 ER - TY - JOUR AU - Lichtenwalner, D. J. AU - Jur, J. S. AU - Kingon, A. I. AU - Agustin, M. P. AU - Yang, Y. AU - Stemmer, S. AU - Goncharova, L. V. AU - Gustafsson, T. AU - Garfunkel, E. PY - 2005 DA - 2005// TI - Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction JO - J Appl Phys VL - 98 UR - https://doi.org/10.1063/1.1988967 DO - 10.1063/1.1988967 ID - Lichtenwalner2005 ER - TY - JOUR AU - Yamada, H. AU - Shimizu, T. AU - Suzuki, E. PY - 2002 DA - 2002// TI - Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition JO - Jpn J App Phys VL - 41 UR - https://doi.org/10.1143/JJAP.41.L368 DO - 10.1143/JJAP.41.L368 ID - Yamada2002 ER - TY - JOUR AU - Wong, H. AU - Ng, K. L. AU - Zhan, N. AU - Poon, M. C. AU - Kok, C. W. PY - 2004 DA - 2004// TI - Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen JO - J Vac Sci Technol B VL - 22 UR - https://doi.org/10.1116/1.1740764 DO - 10.1116/1.1740764 ID - Wong2004 ER - TY - CHAP AU - Lucovsky, G. ED - Iwai, H. ED - Nishi, Y. ED - Shur, M. S. ED - Wong, H. PY - 2006 DA - 2006// TI - Bond strain and defects at Si-SiO2 and dielectric interfaces in high-k gate stacks BT - Frontiers in Electronics PB - World Scientific CY - Singapore UR - https://doi.org/10.1142/9789812773081_0014 DO - 10.1142/9789812773081_0014 ID - Lucovsky2006 ER - TY - JOUR AU - Lucovsky, G. PY - 2003 DA - 2003// TI - Electronic structure of transition metal/rare earth alternative high-k gate dielectrics: interfacial band alignments and intrinsic defects JO - Microeletron Reliab VL - 43 UR - https://doi.org/10.1016/S0026-2714(03)00253-1 DO - 10.1016/S0026-2714(03)00253-1 ID - Lucovsky2003 ER - TY - JOUR AU - Lucovsky, G. AU - Phillips, J. C. PY - 2004 DA - 2004// TI - Microscopic bonding macroscopic strain relaxations at Si-SiO2 interfaces JO - Appl Phys A VL - 78 UR - https://doi.org/10.1007/s00339-003-2403-2 DO - 10.1007/s00339-003-2403-2 ID - Lucovsky2004 ER - TY - JOUR AU - Fitch, J. T. AU - Bjorkman, C. H. AU - Lucovsky, G. AU - Pollak, F. H. AU - Yim, X. PY - 1989 DA - 1989// TI - Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing JO - J Vac Sci Technol B VL - 7 UR - https://doi.org/10.1116/1.584599 DO - 10.1116/1.584599 ID - Fitch1989 ER - TY - JOUR AU - Lucovsky, G. AU - Yang, H. AU - Niimi, H. AU - Keister, J. W. AU - Rowe, J. E. AU - Thorpe, M. F. AU - Phillips, J. C. PY - 2000 DA - 2000// TI - Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics JO - J Vac Sci Technol B VL - 18 UR - https://doi.org/10.1116/1.591464 DO - 10.1116/1.591464 ID - Lucovsky2000 ER - TY - JOUR AU - Wong, H. AU - Iwai, H. PY - 2006 DA - 2006// TI - Modeling and characterization of direct tunneling current in dual-layer ultrathin gate dielectric films JO - J Vac Sci Technol B VL - 24 UR - https://doi.org/10.1116/1.2213268 DO - 10.1116/1.2213268 ID - Wong2006 ER - TY - JOUR AU - Wong, H. AU - Iwai, H. AU - Kakushima, K. AU - Yang, B. L. AU - Chu, P. K. PY - 2010 DA - 2010// TI - XPS study of the bonding properties of lanthanum oxide/silicon interface with a trace amount of nitrogen incorporation JO - J Electrochem Soc VL - 157 UR - https://doi.org/10.1149/1.3268128 DO - 10.1149/1.3268128 ID - Wong2010 ER - TY - CHAP AU - Kawanago, T. PY - 2011 DA - 2011// TI - A study on high-k/metal gate stack MOSFETs with rare earth oxides BT - Ph.D. Dissertation PB - Tokyo Institute of Technology CY - Japan ID - Kawanago2011 ER - TY - JOUR AU - Wong, H. AU - Sen, B. AU - Yang, B. L. AU - Huang, A. P. AU - Chu, P. K. PY - 2007 DA - 2007// TI - Effects and mechanisms of nitrogen incorporation in hafnium oxide by plasma immersion implantation JO - J Vac Sci Technol B VL - 25 UR - https://doi.org/10.1116/1.2799969 DO - 10.1116/1.2799969 ID - Wong2007 ER - TY - JOUR AU - Wong, H. AU - Yang, B. L. AU - Kakushima, K. AU - Ahmet, P. AU - Iwai, H. PY - 2012 DA - 2012// TI - Effects of aluminum doping on lanthanum oxide gate dielectric films JO - Vacuum VL - 86 UR - https://doi.org/10.1016/j.vacuum.2011.06.023 DO - 10.1016/j.vacuum.2011.06.023 ID - Wong2012 ER - TY - JOUR AU - Sen, B. AU - Wong, H. AU - Molina, J. AU - Iwai, H. AU - Ng, J. A. AU - Kakushima, K. AU - Sarkar, C. K. PY - 2007 DA - 2007// TI - Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements JO - Solid State Electron VL - 51 UR - https://doi.org/10.1016/j.sse.2007.01.032 DO - 10.1016/j.sse.2007.01.032 ID - Sen2007 ER - TY - JOUR AU - Perevalov, T. V. AU - Gritsenko, V. A. AU - Erenburg, S. B. AU - Badalyan, A. M. AU - Wong, H. AU - Kim, C. W. PY - 2007 DA - 2007// TI - Atomic and electronic structure of amorphous and crystalline hafnium oxide: x-ray photoelectron spectroscopy and density functional calculations JO - J Appl Phys VL - 101 UR - https://doi.org/10.1063/1.2464184 DO - 10.1063/1.2464184 ID - Perevalov2007 ER - TY - JOUR AU - Sakamoto, K. AU - Huda, M. AU - Ishii, K. PY - 2005 DA - 2005// TI - Self-aligned planar double-gate field-effect transistors fabricated by a source/drain first process JO - Jpn J Appl Phys VL - 44 UR - https://doi.org/10.1143/JJAP.44.L147 DO - 10.1143/JJAP.44.L147 ID - Sakamoto2005 ER -