Figure 1From: The interfaces of lanthanum oxide-based subnanometer EOT gate dielectricsW 4f XPS spectra with Gaussian decomposition. This figure shows various oxidized states of tungsten near the W/La2O3 interface. (a) As-deposited film. (b) Sample with thermal annealing at 600°C for 30 min. A stronger WO x peak was observed.Back to article page