Figure 2From: The interfaces of lanthanum oxide-based subnanometer EOT gate dielectricsO 1s spectra taken near the W/La 2 O 3 interface. (a) Three oxidation states, corresponding to WO3, WO x , and La-O, were found for the as-deposited film. (b) After thermal annealing, an additional peak, attributing to La-O-W bonding, was found at an energy of 532.2 eV.Back to article page