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Table 1 Device characteristics and electrical parameters

From: Macroporous silicon for high-capacitance devices using metal electrodes

Ox. thick Fill Theory Model  
t ox (nm) L fill (nm) C (μF) C (μF) ESR (Ω) C sp (nF/mm2)
90 150 5.09 4.64 1.08 36.4
33 130 11.67 11.39 1.12 83.4
24 130 15.97 15.48 1.09 109.7