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Table 1 Device characteristics and electrical parameters

From: Macroporous silicon for high-capacitance devices using metal electrodes

Ox. thick

Fill

Theory

Model

 

t ox (nm)

L fill (nm)

C (μF)

C (μF)

ESR (Ω)

C sp (nF/mm2)

90

150

5.09

4.64

1.08

36.4

33

130

11.67

11.39

1.12

83.4

24

130

15.97

15.48

1.09

109.7

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