Figure 2From: Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin filmsSurface morphologies of the same BTO film measured using AFM. (a) As-deposited, (b) etched in the SF6/O2/Ar (75/5/10 sccm) plasma, and (c) post-annealed at 750°C for 2 h under O2 ambient after the etching process.Back to article page