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Figure 4 | Nanoscale Research Letters

Figure 4

From: Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

Figure 4

Enhancement of the gain and suppression of the hole capture probability by hydrogen passivation. The gain enhancement factor and the suppression factor for carrier capture probability are determined as gH/gAs and pAs/pH, where gAs, pAs, gH, and pH are the gain and capture probability before and after exposure to a hydrogen plasma for 30 min, respectively. Inset shows a valence band diagram with the involved hole transitions in the QDIP.

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