Figure 4From: Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectorsEnhancement of the gain and suppression of the hole capture probability by hydrogen passivation. The gain enhancement factor and the suppression factor for carrier capture probability are determined as gH/gAs and pAs/pH, where gAs, pAs, gH, and pH are the gain and capture probability before and after exposure to a hydrogen plasma for 30 min, respectively. Inset shows a valence band diagram with the involved hole transitions in the QDIP.Back to article page