Figure 2
From: Electronic properties of core-shell nanowire resonant tunneling diodes
CB potential profile, sub-band energies, and wave functions. (a) in a 40 nm InAs/5 nm InP/8 nm InAs/5 nm InP/10 nm InAs core-shell NW RTD; inset shows variation of the sub-band energies in the core, middle, and surface shells versus core radius. (b) Same as (a) but with a 40-nm InAs surface shell; insets show the variation of the sub-bands in a 10-nm InAs middle shell with VA and the potential profile for VA = 0.2, 0.4, 0.6, and 0.8 V.