Figure 1From: Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistorsFabricated ZnO nanowire FET (left) and cross-sectional SEM image (right) of ZnO nanowire (dotted line). The ZnO layer was deposited at 190°C comprising an initial Ar purge of 2 s, a 4-s exposure to oxygen plasma, a 1-s exposure to DEZ, and a final Ar purge of 4 s. The ALD RF power was 100 W and the pressure was 15 mTorr.Back to article page