Figure 2

Sub-threshold characteristics of nanowire transistors with a channel length of 10 μm and two parallel nanowires. ZnO layers were deposited at different temperatures using an ALD process comprising an initial Ar purge of 2 s, a 4-s oxygen plasma exposure, a 1-s DEZ dose time, an RF power of 100 W, a pressure of 15 mTorr, and a final Ar purge of 4 s. The characteristics were measured at a drain bias of 1 V.