Figure 3

Output characteristics of nanowire transistors with a channel length of 10 μm and two parallel nanowires. ZnO layers were deposited at temperatures of (a) 150°C, (b) 170°C, (c) 190°C, and (d) 210°C. The ALD process used an initial Ar purge of 2 s, a 4-s oxygen plasma exposure, a 1-s DEZ dose time, an RF power of 100 W, a pressure of 15 mTorr, and a final Ar purge of 4 s.