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Figure 5 | Nanoscale Research Letters

Figure 5

From: Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Figure 5

Field-effect mobility and Hall mobility as a function Zn/O stoichiometric ratio obtained from XPS measurements. The ZnO layers were deposited using an initial Ar purge of 2 s, a 4-s oxygen plasma exposure, a 1-s diethyl zinc dose time, an RF power of 100 W, a pressure of 15 mTorr, and a final Ar purge of 4 s. The deposition temperature is shown at each measurement point.

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