Figure 6From: Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistorsSimulated sub-threshold I D - V G characteristics of ZnO dual nanowire FETs with different values of contact resistance, R con . A measured characteristic is shown for comparison for a ZnO layer deposited at 190°C. VD = 1 V. (Measured: black dashed line; simulated: blue line 10 Ω, pink line 800 kΩ, green line 5 MΩ, red line 11.4 MΩ, black line 50 MΩ).Back to article page