Simulated sub-threshold I
characteristics of ZnO dual nanowire FETs with different values of contact resistance, R
. A measured characteristic is shown for comparison for a ZnO layer deposited at 190°C. VD = 1 V. (Measured: black dashed line; simulated: blue line 10 Ω, pink line 800 kΩ, green line 5 MΩ, red line 11.4 MΩ, black line 50 MΩ).