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Table 1 Summary of parameters obtained for ZnO nanowire transistors fabricated using ALD layers deposited at different temperatures

From: Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

ALD growth temperature (°C) Threshold voltage, VTH(V) Field-effect mobility (cm2/V.s) Drain current, ID(nA) at VD = 1 V and VG − VTH = 6 V
120 31 0.1 0.014
150 30 0.6 0.13
170 29 2.5 1.28
190 24 10 21.1
210 22 4.9 10.5
  1. The drain-current was determined from the transfer characteristics at VD = 1 V using a gate overdrive (VG − VTH) of 6 V.