Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Table 1 Summary of parameters obtained for ZnO nanowire transistors fabricated using ALD layers deposited at different temperatures

ALD growth temperature (°C)	Threshold voltage, V_TH(V)	Field-effect mobility (cm²/V.s)	Drain current, I_D(nA) at V_D = 1 V and V_G − V_TH = 6 V
120	31	0.1	0.014
150	30	0.6	0.13
170	29	2.5	1.28
190	24	10	21.1
210	22	4.9	10.5

The drain-current was determined from the transfer characteristics at V_D = 1 V using a gate overdrive (V_G − V_TH) of 6 V.