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Figure 10 | Nanoscale Research Letters

Figure 10

From: Overview of emerging nonvolatile memory technologies

Figure 10

Schematic plots of a Flash memory cell and the degradation of its tunnel oxide. The degradation leads to the formation of percolation paths responsible for the FG charge loss, hence the loss of the stored information. The presence of traps in the energy barrier yields the trap-assisted tunneling mechanism and originates the stress-induced leakage current (SILC).

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