Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
© Yan et al.; licensee Springer. 2014
Received: 16 July 2014
Accepted: 26 September 2014
Published: 2 October 2014
We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The reverse current at 1.2 V of LRS is strongly suppressed and more than three orders of magnitude lower than the forward current. The Schottky barrier height was calculated as approximately 0.32 eV, and the electron injection process and resistive switching mechanism were discussed.
KeywordsResistive switching Self-rectifying Schottky barrier
The 80-nm-thick In-Ga-Zn-O film was under the ambient pressure of 5 × 10-4 Pa. The In-Ga-Zn-O films was prepared on a Pt substrate by magnetron sputtering technique at a power of 100 W in 0.5 Pa atmosphere of Ar + O2 mixture (Ar/O2 flow rate ratio = 50:25) at 450°C. Then postdeposition annealing process was carried out at 450°C in O2 ambiance for 30 min. Then, Ag, Ti, Cu, and Pt were deposited as top electrodes by direct current (DC) magnetron sputtering using a metal shadow mask. The top electrode with 70 nm in thickness was deposited at room temperature. The base pressure of the sputtering chamber was below 2 × 10-4 Pa, and the working pressure was 3 Pa maintained by a gas mixture of argon. The diameter of the top electrodes was 0.1 mm, and the DC power was 10 W. Keithley 2400 source-measure unit (Keithley Instruments Inc., Cleveland, OH, USA) and probe station were employed to measure the electrical characteristics and switching properties. The bottom electrode Pt was grounded, and voltage sweeps were always applied to the Ag top electrode.
Results and discussion
Figure 1 demonstrates the representative I-V characteristic with 0.18, 0.5, and 1.3 V max voltage sweep range; the rectification effects were observed Figure 1c,d. The direction of the voltage sweep 0 → 1.3 → 0 → -1.3 → 0 V is denoted by the numbered arrows in Figure 1d. A remarkable resistive switching was obtained, and the memory cell can be switched between HRS and LRS reversibly. Moreover, the resistive switching was of bipolar type because a reversal polarity of voltage was applied to the cell for transforming the resistance state. It is worth noting that there is no current jump in HRS or LRS as in Ag/STO and Ag/electrolyte/Pt structure resistive switching devices, in which formation and dissolution of Ag filaments are ascribed for the resistive switching mechanism[13, 14]. In addition, the filaments show localization feature; however, we can find obvious size dependence of current of HRS and LRS. The Ag electrodes with two different areas have 0.1 and 0.3 mm diameters. The resistance of the device is scaling with the area size of the top electrode as shown in the inset of Figure 1d. So, no filaments were formed in our device, and the switching mechanism should be different with the phenomenon of electrolytes, and we would discuss the mechanism in following content. The I-V curve of the voltage sweep -1.6 → 1.6 V was measured after the cell was switched to LRS in the inset of Figure 1d. We can observe the Schottky-diode-like behavior in Ag/In-Ga-Zn-O/Pt memory cell, and the reverse current at -1.2 V of LRS is about more than three orders of magnitude lower than forward current at 1.2 V due to the remarkable suppression by the barrier as shown in Figure 1d.
In conclusion, we fabricated the Ag/In-Ga-Zn-O/Pt structure device by RF magnetron sputtering method in this study. The device exhibited good bipolar resistive switching and superior self-rectifying effect. Schottky diode model was employed to explain the mechanism of the self-rectifying characteristics, and the Schottky barrier height is calculated by measuring the I-V curves and fitting the data at different temperatures. The experimental results confirm that the resistive switching of Ag/In-Ga-Zn-O/Pt structure can become a promising candidate as non-volatile memory devices using in cross-bar structure.
This work was financially supported by National Natural Science Foundation of China under Grant Nos. 61306098, 61475041, and 11374086, the Natural Science Foundation of Hebei Province (E2012201088, E2013201176), and the Science Research Program of University in Hebei Province (ZH2012019).
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