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Figure 1 | Nanoscale Research Letters

Figure 1

From: Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

Figure 1

Schematic of a sneak current path and I-V characteristics of Ag/In-Ga-Zn-O/Pt resistive memory. (a) The sneak current path as a dotted line in cross-bar array. When HRS cell is read, the sneak current path is formed due to the surrounding LRS cells. (b)-(d) The I-V characteristics of Ag/In-Ga-Zn-O/Pt resistive memory on a semilogarithmic scale with different range of voltage sweep, and the voltage is swept in the direction as follows: 1 → 2 → 3 → 4 process. The inset of (d) shows the LRS of the resistive memory (upper) and the resistance of the device scaling with the area size of the top electrode (lower).

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