Figure 2From: Coexistence of memory resistance and memory capacitance in TiO2 solid-state devicesResistive and capacitive switching characteristics of Pt/TiO 2 /TiO x /Pt cells. (a) non-zero crossing I-V characteristic indicating capacitive capabilities, (b) R-V characteristics of TiO2 cell, (c) matching C-V characteristics.Back to article page