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Table 1 Structural, electrical, and optical properties of the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO films

From: Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Process condition 2θ(°) FWHM (°) Rrms(nm) Sheet resistance (Ω/□) Resistivity (10−4Ω-cm) Carrier density (1020 cm−3) Hall mobility (cm2/Vs) Average optical transmittance (%) (400 to 800 nm)
As-deposited 34.44 0.30 8.741 16 7.9 8.4 9.4 91
Vacuum-annealed 34.48 0.25 8.075 12 6.0 11 9.4 92
Plasma-annealed 34.36 0.28 15.620 9.4 4.7 12 11 95
  1. Structural properties: (002) peak location, full width at half maximum of X-ray diffraction spectra, and surface roughness; electrical properties: carrier concentration, mobility, and electrical resistivity; and optical property: average optical transmittance in the visible range from 400 to 800 nm.