Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Table 2 Photovoltaic characteristics of the fabricated OPV devices with the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO electrodes

Process condition	V_oc(V)	J_sc(mA/cm²)	FF (%)	Power conversion efficiency (%)
As-deposited	0.44	4.55	31	0.62
Vacuum-annealed	0.52	4.88	32	0.81
Plasma-annealed	0.54	5.51	41	1.22
ITO electrode^a	0.60	6.00	59	2.10

^aThe photovoltaic characteristics of the ITO-based device were found by the author’s group and published in reference [29]. V_oc, open-circuit voltage; J_sc, short-circuit current density; FF, fill factor.