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Table 2 Photovoltaic characteristics of the fabricated OPV devices with the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO electrodes

From: Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Process condition Voc(V) Jsc(mA/cm2) FF (%) Power conversion efficiency (%)
As-deposited 0.44 4.55 31 0.62
Vacuum-annealed 0.52 4.88 32 0.81
Plasma-annealed 0.54 5.51 41 1.22
ITO electrodea 0.60 6.00 59 2.10
  1. aThe photovoltaic characteristics of the ITO-based device were found by the author’s group and published in reference [29]. Voc, open-circuit voltage; Jsc, short-circuit current density; FF, fill factor.