Figure 2From: Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etchingThe cross-section morphology of #3. The whole view (a) and the magnified field of the cap and transition layer (b), mesopores in the middle (c), and mesopores in the bottom (d). The schematic of the cross-section structure is shown on the left (e).Back to article page