Figure 3From: Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etchingThe cross-section morphology of #4. The whole view (a) and the magnified field of cap and transition layer (b), mesopores in the middle (c), and mesopores in the bottom (d). The plane view (e) at 1-μm deep is realized by RIE and SEM. The schematic cross-section structure (f).Back to article page