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Table 1 Experimental parameters

From: Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Sample number

Contact property

Etching mode

T(ms)

Toff(ms)

#1

Schottky contact

Constant pulsed current

J = 35 mA/cm2

10

0

#2

Schottky contact

Constant pulsed current

J = 35 mA/cm2

10

5

#3

Schottky contact

Constant pulsed current

J = 35 mA/cm2

0.4

0

#4

Schottky contact

Constant pulsed current

J = 35 mA/cm2

0.4

0.2

#5

Ohmic contact

Constant pulsed current

J = 50 mA/cm2

0.4

0

#6

Ohmic contact

Constant pulsed current

J = 50 mA/cm2

0.4

0.2

#7

Schottky contact

Constant voltage (14 V) with pulsed current

0.4

0

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