Skip to main content

Table 1 Experimental parameters

From: Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Sample number Contact property Etching mode T(ms) Toff(ms)
#1 Schottky contact Constant pulsed current
J = 35 mA/cm2
10 0
#2 Schottky contact Constant pulsed current
J = 35 mA/cm2
10 5
#3 Schottky contact Constant pulsed current
J = 35 mA/cm2
0.4 0
#4 Schottky contact Constant pulsed current
J = 35 mA/cm2
0.4 0.2
#5 Ohmic contact Constant pulsed current
J = 50 mA/cm2
0.4 0
#6 Ohmic contact Constant pulsed current
J = 50 mA/cm2
0.4 0.2
#7 Schottky contact Constant voltage (14 V) with pulsed current 0.4 0