Table 1 Experimental parameters
From: Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
Sample number | Contact property | Etching mode | T(ms) | Toff(ms) |
---|---|---|---|---|
#1 | Schottky contact | Constant pulsed current J = 35 mA/cm2 | 10 | 0 |
#2 | Schottky contact | Constant pulsed current J = 35 mA/cm2 | 10 | 5 |
#3 | Schottky contact | Constant pulsed current J = 35 mA/cm2 | 0.4 | 0 |
#4 | Schottky contact | Constant pulsed current J = 35 mA/cm2 | 0.4 | 0.2 |
#5 | Ohmic contact | Constant pulsed current J = 50 mA/cm2 | 0.4 | 0 |
#6 | Ohmic contact | Constant pulsed current J = 50 mA/cm2 | 0.4 | 0.2 |
#7 | Schottky contact | Constant voltage (14 V) with pulsed current | 0.4 | 0 |