Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

Table 1 ICP-AES analysis of impurities in raw Si powder

	Element
	Fe	Al	Ti	P	Ca	Na	Mn	Mg	K	Cr
Impurity concentration (%)	5,100	2,200	421	16	98	38	793	55	20	230