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Table 1 ICP-AES analysis of impurities in raw Si powder

From: Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

  Element
  Fe Al Ti P Ca Na Mn Mg K Cr
Impurity concentration (%) 5,100 2,200 421 16 98 38 793 55 20 230