Figure 6From: Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structuresLEE versus p-GaN thickness of the nanorod LED structure. LEE is plotted as a function of the p-GaN thickness for the TE (black dots) and TM (red dots) modes. The diameter and height of simulated nanorods are 260 and 1,000 nm, respectively.Back to article page