Figure 2From: Maskless micro/nanofabrication on GaAs surface by friction-induced selective etchingEffect of etching period on fabrication of GaAs surface by scratching and post-etching. The AFM images (top) and cross-sectional profiles (bottom) of the nanostructures were obtained after scratching under a normal load of 20 mN and post-etching in the H2SO4 aqueous solution for 5, 15, 30, and 60 min, respectively.Back to article page