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Table 1 Comparison of Schottky properties of GaN diodes with TiN and Ni electrodes

From: Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Metal Work function (eV) SBH (eV) Ideality factor Reference
TiN 4.7 0.59 1.07 This work
Ni 5.15 0.87 1.23 This work
TiN 4.7 0.67 1.04 [11]
Ni 5.15 0.88 to 0.93 1.10 to 1.20 [12, 13]