SEM and TEM images of the single poly-Si JL-FinFET GAA NVM. (a) The top-view SEM image of the active region of single poly-Si JL-FinFET GAA NVM with gate length (Lg) = 0.1 μm. (b) The TEM image of cross-section of the single poly-Si JL-FinFET NVM with GAA-NWs. (c) The effective channel width (Weff) is 200 nm × 10 [(93 nm × 2 + 7 nm × 2) × 10)]. (d) The oxide/nitride layers are designed to be 4.5 nm thick/7.3 nm thick.