TY - JOUR AU - Ghadiry, M. H. AU - A'ain, A. K. AU - Nadi, M. PY - 2011 DA - 2011// TI - Design and analysis of a novel low PDP full adder cell JO - J Circuits Syst Comput VL - 20 UR - https://doi.org/10.1142/S0218126611007323 DO - 10.1142/S0218126611007323 ID - Ghadiry2011 ER - TY - JOUR AU - Dorgan, V. E. AU - Bae, M. -. H. AU - Pop, E. PY - 2010 DA - 2010// TI - Mobility and saturation velocity in graphene on SiO2 JO - Appl Phys Lett VL - 97 UR - https://doi.org/10.1063/1.3483130 DO - 10.1063/1.3483130 ID - Dorgan2010 ER - TY - JOUR AU - Murali, R. AU - Yang, Y. AU - Brenner, K. AU - Beck, T. AU - Meindl, J. D. PY - 2009 DA - 2009// TI - Breakdown current density of graphene nanoribbons JO - Appl Phys Lett VL - 94 UR - https://doi.org/10.1063/1.3147183 DO - 10.1063/1.3147183 ID - Murali2009 ER - TY - JOUR AU - Lee, K. -. J. AU - Chandrakasan, A. AU - Kong, J. PY - 2011 DA - 2011// TI - Breakdown current density of CVD-grown multilayer graphene interconnects JO - Electron Device Lett VL - 32 UR - https://doi.org/10.1109/LED.2011.2108259 DO - 10.1109/LED.2011.2108259 ID - Lee2011 ER - TY - JOUR AU - Hertel, S. AU - Kisslinger, F. AU - Jobst, J. AU - Waldmann, D. AU - Krieger, M. AU - Weber, H. B. PY - 2011 DA - 2011// TI - Current annealing and electrical breakdown of epitaxial graphene JO - Appl Phys Lett VL - 98 UR - https://doi.org/10.1063/1.3592841 DO - 10.1063/1.3592841 ID - Hertel2011 ER - TY - JOUR AU - Ghadiry, M. AU - Nadi, M. AU - Saeidmanesh, M. AU - Karimi Feiz Abadi, H. PY - 2014 DA - 2014// TI - An analytical approach to study breakdown mechanism in graphene nanoribbon field effect transistors JO - J Comput Theor Nanosci VL - 11 UR - https://doi.org/10.1166/jctn.2014.3357 DO - 10.1166/jctn.2014.3357 ID - Ghadiry2014 ER - TY - JOUR AU - Ghadiry, M. AU - Nadi, M. AU - Bahadorian, M. AU - Abd Manaf, M. AU - Karimi, H. AU - Sadeghi, H. PY - 2013 DA - 2013// TI - An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors JO - J Microelectron Reliabil VL - 53 UR - https://doi.org/10.1016/j.microrel.2012.12.002 DO - 10.1016/j.microrel.2012.12.002 ID - Ghadiry2013 ER - TY - JOUR AU - Ghadiry, M. H. AU - Nadi, S. M. AU - Ahmadic, M. T. AU - Abd Manafa, M. PY - 2011 DA - 2011// TI - A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors JO - Microelectron Reliabil VL - 51 UR - https://doi.org/10.1016/j.microrel.2011.07.009 DO - 10.1016/j.microrel.2011.07.009 ID - Ghadiry2011 ER - TY - JOUR AU - Pirro, L. AU - Girdhar, A. AU - Leblebici, Y. AU - Leburton, J. P. PY - 2012 DA - 2012// TI - Impact ionization and carrier multiplication in graphene JO - J Appl Phys VL - 112 UR - https://doi.org/10.1063/1.4761995 DO - 10.1063/1.4761995 ID - Pirro2012 ER - TY - JOUR AU - Girdhar, A. AU - Leburton, J. P. PY - 2011 DA - 2011// TI - Soft carrier multiplication by hot electrons in graphene JO - Appl Phys Lett VL - 99 UR - https://doi.org/10.1063/1.3615286 DO - 10.1063/1.3615286 ID - Girdhar2011 ER - TY - JOUR AU - Liao, A. D. AU - Wu, J. Z. AU - Wang, X. AU - Tahy, K. AU - Jena, D. AU - Dai, H. AU - Pop, E. PY - 2011 DA - 2011// TI - Thermally limited current carrying ability of graphene nanoribbons JO - Phys Rev Lett VL - 106 UR - https://doi.org/10.1103/PhysRevLett.106.256801 DO - 10.1103/PhysRevLett.106.256801 ID - Liao2011 ER - TY - JOUR AU - Wong, H. PY - 2000 DA - 2000// TI - Drain breakdown in submicron MOSFETs JO - Solid State Electron VL - 10 ID - Wong2000 ER - TY - JOUR AU - Fang, T. AU - Konar, A. AU - Xing, H. AU - Jena, D. PY - 2011 DA - 2011// TI - High-field transport in two-dimensional graphene JO - Phys Rev B VL - 84 UR - https://doi.org/10.1103/PhysRevB.84.125450 DO - 10.1103/PhysRevB.84.125450 ID - Fang2011 ER - TY - JOUR AU - Rubel, O. AU - Potvin, A. AU - Laughton, D. PY - 2011 DA - 2011// TI - Generalized lucky-drift model for impact ionization in semiconductors with disorder JO - J Phys Condens Matter VL - 23 UR - https://doi.org/10.1088/0953-8984/23/5/055802 DO - 10.1088/0953-8984/23/5/055802 ID - Rubel2011 ER - TY - JOUR AU - Sun, E. AU - Moll, J. AU - Berger, J. AU - Alders, B. PY - 1974 DA - 1974// TI - Breakdown mechanism in short-channel MOS transistors JO - Electron Devices Meet VL - 24 ID - Sun1974 ER - TY - JOUR AU - Su, V. C. AU - Lin, I. S. AU - Kuo, J. B. AU - Lin, G. S. AU - Chen, D. AU - Yeh, C. S. AU - Tsai, C. T. AU - Ma, M. PY - 2008 DA - 2008// TI - Breakdown behavior of 40-nm PD-SOI NMOS device considering STI-induced mechanical stress effect JO - Electron Device Lett VL - 29 UR - https://doi.org/10.1109/LED.2008.922971 DO - 10.1109/LED.2008.922971 ID - Su2008 ER -