Figure 1From: Graphene nanoribbon field-effect transistor at high biasCross section of the device used for modelling and fabrication. The dimensions of the layers are as follows: (from top) GNR thickness tg =0.4 nm, oxide thickness tox =20 nm, contact thickness tAu =100 nm, channel length L =100 nm, and channel width W =30 nm.Back to article page