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Table 1 Characteristics of GaInNAsSb p-i-n diodes at different illumination conditions

From: Performance assessment of multijunction solar cells incorporating GaInNAsSb

Spectrum

Device

Jsc(mA/cm2)

Jsc–ideal(mA/cm2)

EQEav

Voc(V)

FF

η

I0(mA/cm2)

n

AM1.5G

GaInNAs (1 eV)

39.9

48.12

0.83

0.416

70%

11.6%

1.20E-03

1.55

AM1.5G (900-nm LP)

GaInNAs (1 eV)

9.98

16.48

0.61

0.368

68%

2.5%

1.20E-03

1.58

AM1.5G

GaInNAsSb (0.9 eV)

35.0

51.61

0.68

0.383

65%

7.2%

1.70E-02

1.60

  1. FF, fill factor; η, solar cell efficiency.

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