Table 1 Characteristics of GaInNAsSb p-i-n diodes at different illumination conditions
From: Performance assessment of multijunction solar cells incorporating GaInNAsSb
Spectrum | Device | Jsc(mA/cm2) | Jsc–ideal(mA/cm2) | EQEav | Voc(V) | FF | η | I0(mA/cm2) | n |
---|---|---|---|---|---|---|---|---|---|
AM1.5G | GaInNAs (1 eV) | 39.9 | 48.12 | 0.83 | 0.416 | 70% | 11.6% | 1.20E-03 | 1.55 |
AM1.5G (900-nm LP) | GaInNAs (1 eV) | 9.98 | 16.48 | 0.61 | 0.368 | 68% | 2.5% | 1.20E-03 | 1.58 |
AM1.5G | GaInNAsSb (0.9 eV) | 35.0 | 51.61 | 0.68 | 0.383 | 65% | 7.2% | 1.70E-02 | 1.60 |