Figure 1
From: Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping
A schematic representation of the fabrication process for DAL TFTs in the process order from (a-e). The placement of the 20-nm-thick HECL was selected by considering the channel path formed between the actual source and drain. To confirm the direct influence of HECL, the HECL length was varied within a range to be shorter than the channel path (0, 20, 40, and 60 μm).