Figure 2From: Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-dopingElectrical properties such as conductivity and Hall mobility and carrier concentration of a-IGZO thin films. Electrical properties such as (a) conductivity and (b) Hall mobility and carrier concentration of a-IGZO thin films as a function of UV irradiation time (0, 30, 60, 120, and 240 min). As UV irradiation time increases, electrical properties increase linearly owing to permanent optical doping.Back to article page