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Figure 4 | Nanoscale Research Letters

Figure 4

From: Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Figure 4

BF TEM, HRTEM, and HAADF STEM images of a nanowire and spot EDX data. (a) BF TEM image of a nanowire with the complete core-MQW shell structure including the outermost AlGaAs layer. (b) HRTEM image of the boxed area in Figure 4a, and the insets show the corresponding FFT patterns from ZB and WZ structures. (c) HAADF STEM image of the same nanowire shown in Figure 4a. The white line shown in the box represents the region along which the spot EDX was measured. (d) Spot EDX data revealing the atomic weight percentage of the constituent elements of the outermost AlGaAs layer in the nanowire shown in Figure 4c. The inset shows the cross-sectional schematic of the nanowire structure shown in Figure 4a. The arrow shown in the inset indicates the layer from which spot EDX is taken.

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