Figure 1From: Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor depositionXRCs and RSM showing crystallinities and coherency of the samples. (a) θ/2θ scan XRD patterns of AlInN epilayer grown on GaN substrate at 780 and 800°C. (b) AlInN(0002) XRCs for the growth at 780 and 800°C showing FWHMs of 219 and 284 arcsec, respectively. (c) 10 1 ¯ 5 RSM of the 780°C sample.Back to article page