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Table 1 Effects of deposition voltage of the potentiostatic deposition process on the compositions of the (Bi,Sb) 2 - x Te 3 + x materials

From: Using anodic aluminum oxide templates and electrochemical method to deposit BiSbTe-based thermoelectric nanowires

Potential (V)

Electrolyte formula (a)

Electrolyte formula (b)

Atomic ratio (%)

Atomic ratio (%)

 

Sb

Te

Bi

Sb

Te

Bi

0.00

0.00

94.50

5.50

1.48

92.16

6.36

-0.20

5.32

89.22

5.54

6.88

68.86

24.26

-0.30

37.35

44.05

18.61

7.42

35.14

57.43

-0.40

36.23

44.01

19.78

9.97

30.19

59.83

-0.50

41.42

33.72

24.86

10.57

27.46

61.97

-0.60

45.15

44.75

10.11

11.83

29.48

58.69

  1. Effects of deposition voltage of the potentiostatic deposition process on the compositions of the (Bi,Sb)2 - xTe3 + x materials, and deposition time was 60 min. Electrolyte formula was (a) 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 and (b) 0.015 M Bi(NO3)3-5H2O, 0.005 M SbCl3, and 0.0075 M TeCl4, respectively.

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