Using anodic aluminum oxide templates and electrochemical method to deposit BiSbTe-based thermoelectric nanowires

Table 2 Effects of t _off in pulse deposition process on the compositions of (Bi,Sb) _{2 -} _x Te _{3 +} _x materials

	Sb	Te	Bi
Potentiostatic deposition process	9.97	30.19	59.83
t_off = 0.1 s	7.09	31.29	61.63
t_off = 0.4 s	7.71	51.25	41.05
t_off = 1 s	12.02	69.43	18.54
t_off = 1.6 s	7.22	79.62	13.16
t_off = 2 s	5.77	84.06	10.17
t_off = 4 s	6.24	86.30	7.46

The electrolyte formula was 0.015 M Bi(NO₃)₃-5H₂O, 0.005 M SbCl₃, and 0.0075 M TeCl₄; the bias voltage was set at -0.4 V; t_on was set at 0.2 s; and t_off was changed from 0.1 to 4 s.