Figure 4From: Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface trapsI off versus I on for the studied devices with different D it levels. The black dot is the result of a free device. (a, c) n-/p-type bulk FinFET and (b, d) n-/p-type planar MOSFET devices.Back to article page