Figure 3From: Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayersCross-sectional TEM image of 900°C annealed Si (4 nm)/SiC (2 nm) multilayers. (a) The cross-sectional TEM image of Si QDs/SiC MLs after 900 °C annealing. (b) The high-resolution TEM image, in which the formed Si QDs can be clearly identified.Back to article page