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Figure 1 | Nanoscale Research Letters

Figure 1

From: Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors

Figure 1

Schematics of double-gate GNR-FET and the atomic structure of AGNR. (a) Schematics of double-gate GNR FET where a semiconducting AGNR is used as channel material. (b) The atomic structure of AGNR. Hydrogen atoms are attached to the edge carbon atoms to terminate the dangling bonds. N is defined by counting the number of C-atoms forming a zigzag chain in the transverse direction.

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