Figure 1From: Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistorsSchematics of double-gate GNR-FET and the atomic structure of AGNR. (a) Schematics of double-gate GNR FET where a semiconducting AGNR is used as channel material. (b) The atomic structure of AGNR. Hydrogen atoms are attached to the edge carbon atoms to terminate the dangling bonds. N is defined by counting the number of C-atoms forming a zigzag chain in the transverse direction.Back to article page