Figure 1
From: Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance
Schematic diagram of the fabrication of devices with horizontally aligned Si NW arrays. (a) Photoresist was spin-coated; (b) etched substrate was vertically pressed onto the target substrate; (c) Si NWs were transferred onto the target substrate; (d) the second layer of photoresist was spin-coated; and (e) the multiwire devices were successfully fabricated by photolithography and lift-off processes.