Figure 4
From: Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance
Photoconductive characteristics of the multiwire device. (a) I-V characteristics of the multiwire device in dark (black ball) and under laser irradiation (808-nm wavelength, 0.1 W/mm2, red ball); Inset is the I-V characteristics of the multiwire device (small scale) in the dark. (b) Photoresponse of the multiwire device at a bias voltage of 1 V under laser irradiation (808-nm wavelength, 0.1 W/mm2) that were turned ON and OFF. (c) Dynamic response performance of the multiwire device at 1-V bias.