Figure 2
From: RRAM characteristics using a new Cr/GdOx/TiN structure
TEM and EDS analysis. (a) TEM image of our Cr/GdOx/TiN RRAM device. Device size is 0.4 × 0.4 μm2. HRTEM image of Cr/GdOx/TiN memory device at (b) the outside and (c) the inside of the via-hole regions. The thicknesses of the GdOx layer at the outside and inside of via holes are 23 and 17 nm, respectively. (d) Energy dispersive X-ray spectra (EDS) show Cr, Gd, Ti, N, and O elements. The positions of all spectra taken from TEM image are shown in (c).