Figure 5
From: RRAM characteristics using a new Cr/GdOx/TiN structure
Cumulative probability of leakage current, formation voltage, SET/RESET voltage, and RESET currents. (a) Leakage current distributions with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm2. The thicknesses of GdOx film are 17 and 9 nm. (b) Forming voltage, (c) SET/RESET voltage, and (d) RESET currents with different device sizes and a thickness of GdOx film of 17 nm. Fifty devices were measured randomly for each size. It is found that the 8-μm RRAM device shows best uniformity as compared to other sizes.