Figure 7
From: RRAM characteristics using a new Cr/GdOx/TiN structure
Repeatable I-V characteristics and cumulative probability of HRS and LRS. (a) Hundred I-V characteristics of the 0.4-μm devices. (b) Statistical distributions of HRS and LRS for the 8- and 0.4-μm devices are plotted. Fifty devices were measured randomly. The thicknesses of the GdOx film were 17 and 9 nm for the 8- and 0.4-μm devices, respectively. By considering resistance ratio of >2, successful devices are found to be 78% and 72% for the 8- and 0.4-μm devices, respectively.