Figure 8From: RRAM characteristics using a new Cr/GdOx/TiN structureSwitching cycle-to-cycle uniformity. (a) Repeatable 90 I-V switching cycles are shown for a GdOx film thickness of 17 nm. The VSET is varied from 1 to 1.5 V and VRESET is about -1.5 V. (b) Hundred cycle-to-cycle statistical distribution of currents at HRS and LRS. (c) The P/E endurance of >100 cycles is obtained.Back to article page