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Figure 5 | Nanoscale Research Letters

Figure 5

From: Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

Figure 5

Experimental (symbols) and theoretical reset temperature (lines) of two reset cycles in the Cu/HfO 2 /Pt device. The dashed lines indicate the reset voltage dropped on the RRAM cell, corresponding to the maximum current, i.e., the reset point. The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.

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